FDS4675 Whakatakotoranga Hangarau

ON SEMICONDUCTOR - FDS4675 - Power MOSFET, P Channel, 40 V, 11 A, 0.013 ohm, SOIC, Surface Mount

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 8
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2.4W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 20 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 11A Ta
Rise Time 29ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) -11A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 50A
Max Junction Temperature (Tj) 175°C
Height 1.75mm
Width 3.9mm
REACH SVHC No SVHC
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Weight 130mg
Operating Temperature -55°C~175°C TJ
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 13MOhm
Voltage - Rated DC -40V
Terminal Position DUAL
Current Rating -11A
Number of Channels 1
Element Configuration Single
Power Dissipation 2.4W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 13m Ω @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4350pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 4.5V
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Turn-Off Delay Time 95 ns
Threshold Voltage -1.4V
Drain to Source Breakdown Voltage -40V
Dual Supply Voltage -40V
Nominal Vgs -1.4 V
Length 4.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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