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FGA30N60LSDTU Whakatakotoranga Hangarau

Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-3PN Tube

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 35 ns
Turn On Time 62 ns
Vce(on) (Max) @ Vge, Ic 1.4V @ 15V, 30A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 90A
Switching Energy 1.1mJ (on), 21mJ (off)
Gate-Emitter Thr Voltage-Max 7V
Height 18.9mm
Width 5mm
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-3P-3, SC-65-3
Weight 6.401g
Operating Temperature -55°C~150°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 480W
Element Configuration Single
Power - Max 480W
Polarity/Channel Type N-CHANNEL
Max Collector Current 60A
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 30A, 6.8 Ω, 15V
Turn Off Time-Nom (toff) 2870 ns
Gate Charge 225nC
Td (on/off) @ 25°C 18ns/250ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 2000ns
Length 15.8mm
Radiation Hardening No
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