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FGPF15N60UNDF Whakatakotoranga Hangarau

FGPF15N60UNDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 42W
Element Configuration Single
Input Type Standard
Transistor Application MOTOR CONTROL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 82.4 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 18.8 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 15A
IGBT Type NPT
Current - Collector Pulsed (Icm) 45A
Switching Energy 370μJ (on), 67μJ (off)
Gate-Emitter Thr Voltage-Max 8.5V
Height 16.07mm
Width 2.74mm
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 hours ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Case Connection ISOLATED
Power - Max 42W
Polarity/Channel Type N-CHANNEL
Max Collector Current 30A
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 2.2V
Test Condition 400V, 15A, 10 Ω, 15V
Turn Off Time-Nom (toff) 69.8 ns
Gate Charge 43nC
Td (on/off) @ 25°C 9.3ns/54.8ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 12.8ns
Length 10.36mm
Radiation Hardening No
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