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FQA7N80C-F109 Whakatakotoranga Hangarau

MOSFET N-CH 800V 7A TO-3P

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Transistor Element Material SILICON
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Terminal Form THROUGH-HOLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 1.9Ohm
DS Breakdown Voltage-Min 800V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Surface Mount NO
Packaging Tube
Part Status Active
Number of Terminations 3
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Operating Temperature (Max) 150°C
Configuration SINGLE WITH BUILT-IN DIODE
Transistor Application SWITCHING
Drain Current-Max (Abs) (ID) 7A
Pulsed Drain Current-Max (IDM) 28A
Avalanche Energy Rating (Eas) 580 mJ
Power Dissipation-Max (Abs) 198W
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FQA7N80C-F109 nga kaihanga waitohu: ON Semiconductor, Bonchip taonga, FQA7N80C-F109 utu tohutoro. FQA7N80C-F109 tawhā, FQA7N80C-F109 Pepa Raraunga PDF me te whakaahuatanga whakaahua pine.Ka taea e koe te whakamahi i te FQA7N80C-F109 Hononga Mono, DSP Dateseet PDF, kimihia FQA7N80C-F109 te hoahoa titi me te hoahoa ara iahiko me te tikanga whakamahi mahi, FQA7N80C-F109 akoranga hikohiko.Ka taea e koe te tango mai i te Bonchip.
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