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FQP3N60C Whakatakotoranga Hangarau

MOSFET N-CH 600V 3A TO-220

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 75W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3A Tc
Rise Time 30ns
Vgs (Max) ±30V
Turn-Off Delay Time 35 ns
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 3A
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Weight 1.8g
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 3.4Ohm
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 75W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.4 Ω @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 565pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Lead Free Lead Free
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