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FQT13N06TF Whakatakotoranga Hangarau

Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 188mg
Operating Temperature -55°C~150°C TJ
Published 2002
JESD-609 Code e3
Part Status Active
Number of Terminations 4
Resistance 140mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 2.8A
JESD-30 Code R-PDSO-G4
Power Dissipation-Max 2.1W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 140m Ω @ 1.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 2.8A
Gate to Source Voltage (Vgs) 25V
Feedback Cap-Max (Crss) 20 pF
Length 6.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish TIN
Voltage - Rated DC 60V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 2.1W
Turn On Delay Time 5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.8A Tc
Rise Time 25ns
Vgs (Max) ±25V
Turn-Off Delay Time 8 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 60V
Height 1.6mm
Width 3.56mm
REACH SVHC No SVHC
Lead Free Lead Free
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