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MJD210T4G Whakatakotoranga Hangarau

MJD210T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -25V
Terminal Form GULL WING
Current Rating -5A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation 1.4W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 25V
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A 1V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A
Transition Frequency 65MHz
Max Breakdown Voltage 25V
Emitter Base Voltage (VEBO) 8V
Height 2.38mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory Other Transistors
Max Power Dissipation 1.4W
Peak Reflow Temperature (Cel) 260
Frequency 65MHz
Base Part Number MJD210
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 65MHz
Transistor Type PNP
Max Collector Current 5A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 25V
Collector Emitter Saturation Voltage 1.8V
Collector Base Voltage (VCBO) 40V
hFE Min 70
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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MJD210T4G Tuhinga

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  • Rauraraunga

Ko etahi atu ko   "MJD21"   nga wahanga

Ko nga waahanga e whai ake nei ko  'MJD21' 

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