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MJD3055G Whakatakotoranga Hangarau

MJD3055G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Voltage - Rated DC 60V
Terminal Form GULL WING
Current Rating 10A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation 1.75W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 60V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Transition Frequency 2MHz
Collector Base Voltage (VCBO) 70V
hFE Min 20
Length 6.73mm
Radiation Hardening No
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2002
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.75W
Peak Reflow Temperature (Cel) 260
Frequency 2MHz
Base Part Number MJD3055
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 2MHz
Transistor Type NPN
Max Collector Current 10A
Current - Collector Cutoff (Max) 50μA
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 1.1V
Emitter Base Voltage (VEBO) 5V
Height 2.38mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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MJD3055G Tuhinga

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Ko etahi atu ko   "MJD30"   nga wahanga

Ko nga waahanga e whai ake nei ko  'MJD30' 

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