MJD44H11-1G Whakatakotoranga Hangarau

MJD44H11-1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2001
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 80V
Peak Reflow Temperature (Cel) 260
Frequency 85MHz
Base Part Number MJD44H11
JESD-30 Code R-PSIP-T3
Element Configuration Single
Case Connection COLLECTOR
Halogen Free Halogen Free
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Transition Frequency 50MHz
Collector Base Voltage (VCBO) 5V
hFE Min 60
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 1.75W
Current Rating 8A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Power Dissipation 1.75W
Transistor Application SWITCHING
Gain Bandwidth Product 85MHz
Transistor Type NPN
Max Collector Current 8A
Current - Collector Cutoff (Max) 1μA
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 1V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
Lead Free Lead Free
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