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MJE3055T Whakatakotoranga Hangarau

MJE3055T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2010
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Max Power Dissipation 75W
Base Part Number MJE3055
Element Configuration Single
Power - Max 75W
Transistor Type NPN
Max Collector Current 10A
Current - Collector Cutoff (Max) 700μA
Collector Emitter Breakdown Voltage 60V
Current - Collector (Ic) (Max) 10A
Collector Emitter Saturation Voltage 1.1V
Frequency - Transition 2MHz
Emitter Base Voltage (VEBO) 5V
Height 9.15mm
Width 4.6mm
Lead Free Contains Lead
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Packaging Tube
Part Status Obsolete
Max Operating Temperature 150°C
Voltage - Rated DC 60V
Current Rating 10A
Polarity NPN
Power Dissipation 75W
Gain Bandwidth Product 2MHz
Collector Emitter Voltage (VCEO) 60V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Voltage - Collector Emitter Breakdown (Max) 60V
Max Frequency 2MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 70V
hFE Min 20
Length 10.28mm
RoHS Status Non-RoHS Compliant
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MJE3055T Tuhinga

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  • Rauraraunga

Ko etahi atu ko   "MJE30"   nga wahanga

Ko nga waahanga e whai ake nei ko  'MJE30' 

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