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MMBT6429LT1G Whakatakotoranga Hangarau

MMBT6429LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 225mW
Terminal Form GULL WING
Current Rating 200mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 700MHz
Transistor Type NPN
Max Collector Current 200mA
Current - Collector Cutoff (Max) 100nA
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV
Collector Base Voltage (VCBO) 55V
hFE Min 500
Length 3.04mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2004
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 45V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 700MHz
Base Part Number MMBT6429
Number of Elements 1
Power Dissipation 300mW
Halogen Free Halogen Free
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 45V
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 100μA 5V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Emitter Base Voltage (VEBO) 6V
Height 1.01mm
Width 1.4mm
REACH SVHC No SVHC
Lead Free Lead Free
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