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NGTB15N60EG Whakatakotoranga Hangarau

ON SEMICONDUCTOR - NGTB15N60EG - IGBT, 600V, 15A, TO-220-3

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 117W
Element Configuration Single
Input Type Standard
Power - Max 117W
Turn-Off Delay Time 130 ns
Max Collector Current 30A
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 15A, 22 Ω, 15V
IGBT Type NPT
Current - Collector Pulsed (Icm) 120A
Switching Energy 900μJ (on), 300μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Length 10.28mm
Radiation Hardening No
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case TO-220-3
Number of Pins 3
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Pin Count 3
Power Dissipation 47W
Turn On Delay Time 78 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 270 ns
Collector Emitter Saturation Voltage 1.95V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 15A
Gate Charge 80nC
Td (on/off) @ 25°C 78ns/130ns
Gate-Emitter Voltage-Max 20V
Height 15.75mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
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NGTB15N60EG nga kaihanga waitohu: ON Semiconductor, Bonchip taonga, NGTB15N60EG utu tohutoro. NGTB15N60EG tawhā, NGTB15N60EG Pepa Raraunga PDF me te whakaahuatanga whakaahua pine.Ka taea e koe te whakamahi i te NGTB15N60EG Hononga Mono, DSP Dateseet PDF, kimihia NGTB15N60EG te hoahoa titi me te hoahoa ara iahiko me te tikanga whakamahi mahi, NGTB15N60EG akoranga hikohiko.Ka taea e koe te tango mai i te Bonchip.
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