NGTB20N120IHRWG Whakatakotoranga Hangarau

In a Pack of 2, ON Semiconductor NGTB20N120IHRWG IGBT, 40 A 1200 V, 3-Pin TO-247

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -40°C~175°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 384W
Element Configuration Single
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 40A
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 20A, 10 Ω, 15V
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 120A
Switching Energy 450μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Length 16.25mm
REACH SVHC No SVHC
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-247-3
Number of Pins 3
Packaging Tube
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Pin Count 3
Power Dissipation 384W
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.1V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 20A
Gate Charge 225nC
Td (on/off) @ 25°C -/235ns
Gate-Emitter Voltage-Max 20V
Height 21.4mm
Width 5.3mm
RoHS Status ROHS3 Compliant
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