NGTB30N60FWG Whakatakotoranga Hangarau

ON SEMICONDUCTOR NGTB30N60FWG IGBT Single Transistor, 60 A, 1.45 V, 167 W, 600 V, TO-247, 3 Pins

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 20 hours ago)
Package / Case TO-247-3
Number of Pins 3
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Power Dissipation 167W
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 72ns
Collector Emitter Saturation Voltage 1.45V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
Gate Charge 170nC
Td (on/off) @ 25°C 81ns/190ns
Gate-Emitter Voltage-Max 20V
Height 21.4mm
Width 5.3mm
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 167W
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 60A
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 30A, 10 Ω, 15V
IGBT Type Trench
Current - Collector Pulsed (Icm) 120A
Switching Energy 650μJ (on), 650μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Length 16.25mm
REACH SVHC No SVHC
Lead Free Lead Free
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