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NSTB60BDW1T1G Whakatakotoranga Hangarau

TRANS NPN PREBIAS/PNP 0.25W SC88

Huanga Hua Uara Huanga
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Subcategory Other Transistors
Terminal Form GULL WING
Current Rating -1mA
Base Part Number NSTB60B
Qualification Status Not Qualified
Polarity NPN, PNP
Power Dissipation 256mW
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V / 120 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Transition Frequency 140MHz
Frequency - Transition 140MHz
Resistor - Base (R1) 22k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Published 2002
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 2.13
Max Power Dissipation 250mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Number of Elements 2
Element Configuration Dual
Transistor Type 1 NPN Pre-Biased, 1 PNP
Max Collector Current 150mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 80
Continuous Collector Current -150mA
REACH SVHC No SVHC
Lead Free Lead Free
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