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NSV1C201LT1G Whakatakotoranga Hangarau

NSV1C201LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 490mW
Terminal Form GULL WING
Reference Standard AEC-Q101
Element Configuration Single
Halogen Free Halogen Free
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 150mV
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 150mV @ 200mA, 2A
Transition Frequency 110MHz
Max Breakdown Voltage 100V
Continuous Collector Current 2A
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2001
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position DUAL
Pin Count 3
Number of Elements 1
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Transistor Type NPN
Max Collector Current 3A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 30mV
Collector Base Voltage (VCBO) 140V
Radiation Hardening No
Lead Free Lead Free
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