NTB5405NT4G Whakatakotoranga Hangarau

NTB5405NT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Contact Plating Tin
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 150W
Turn On Delay Time 8.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 116A Tc
Rise Time 153ns
Vgs (Max) ±20V
Turn-Off Delay Time 32 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 800 mJ
Length 10.29mm
Radiation Hardening No
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory FET General Purpose Power
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3W Ta 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.8m Ω @ 40A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 32V
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 42 ns
Continuous Drain Current (ID) 116A
Drain-source On Resistance-Max 0.0058Ohm
Pulsed Drain Current-Max (IDM) 280A
Height 4.83mm
Width 9.65mm
RoHS Status ROHS3 Compliant
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Wāhanga # Kaihanga Kāwai Te waatea
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NTB5405NT4G AMI Semiconductor / ON Semiconductor Transistors - FETs, MOSFETs - Single 416
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