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NTB6410ANT4G Whakatakotoranga Hangarau

MOSFET NFET D2PAK 100V 76A 13MOH

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 188W
Turn On Delay Time 17 ns
Rds On (Max) @ Id, Vgs 13m Ω @ 76A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 190 ns
Continuous Drain Current (ID) 76A
Drain to Source Breakdown Voltage 100V
Radiation Hardening No
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 188W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 76A Tc
Rise Time 170ns
Vgs (Max) ±20V
Turn-Off Delay Time 120 ns
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 500 mJ
RoHS Status ROHS3 Compliant
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