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NTD5865NL-1G Whakatakotoranga Hangarau

MOSFET N-CH 60V 46A IPAK

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSIP-T3
Power Dissipation-Max 71W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 4.4 ns
Continuous Drain Current (ID) 46A
Drain to Source Breakdown Voltage 60V
Height 7.62mm
Width 2.38mm
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Resistance 16MOhm
Subcategory FET General Purpose Power
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 52W
Turn On Delay Time 8.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 46A Tc
Rise Time 12.4ns
Vgs (Max) ±20V
Turn-Off Delay Time 26 ns
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 36 mJ
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
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