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NTD6415AN-1G Whakatakotoranga Hangarau

MOSFET N-CH 100V 23A IPAK

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 83W
Turn On Delay Time 10 ns
Rds On (Max) @ Id, Vgs 55m Ω @ 23A, 10V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 37 ns
Continuous Drain Current (ID) 23A
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 79 mJ
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Resistance 55MOhm
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSIP-T3
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 23A Tc
Rise Time 37ns
Vgs (Max) ±20V
Turn-Off Delay Time 30 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 89A
Height 7.62mm
Width 2.38mm
RoHS Status RoHS Compliant
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