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NTDV20P06LT4G Whakatakotoranga Hangarau

NTDV20P06LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Resistance 150MOhm
Subcategory Other Transistors
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 150m Ω @ 7.5A, 5V
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 5V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Turn-Off Delay Time 28 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 50A
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 65W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 15.5A Ta
Rise Time 90ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 70 ns
Continuous Drain Current (ID) 15.5A
Drain to Source Breakdown Voltage -60V
Radiation Hardening No
Lead Free Lead Free
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