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NTGS3455T1G Whakatakotoranga Hangarau

Mosfet; P-ch; Vdss -30VDC; Rds(on) 0.094 Ohm; Id -3.5A; TSOP-6; Pd 0.5W; Vgs +/-20V; Qg 9

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Resistance 100MOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating -3.5A
Pin Count 6
Power Dissipation-Max 500mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Height 990.6μm
Width 1.7018mm
REACH SVHC No SVHC
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Package / Case SOT-23-6
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -30V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 5V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Threshold Voltage -1.87V
Drain Current-Max (Abs) (ID) 2.5A
Nominal Vgs -1.87 V
Length 3.0988mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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