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NTHD3100CT3G Whakatakotoranga Hangarau

MOSFET 20V +3.9A/-4.4A Complementary

Huanga Hua Uara Huanga
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.1W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 80m Ω @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 16 ns
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2006
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin (Sn)
Voltage - Rated DC 20V
Terminal Form C BEND
Current Rating 3.9A
Base Part Number NTHD3100C
Qualification Status Not Qualified
Element Configuration Dual
Power Dissipation 1.1W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.9A 3.2A
Rise Time 11.7ns
Fall Time (Typ) 11.7 ns
Continuous Drain Current (ID) 3.2A
Drain Current-Max (Abs) (ID) 2.9A
Pulsed Drain Current-Max (IDM) 12A
FET Feature Logic Level Gate
Lead Free Lead Free
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