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NTJD4001NT1G Whakatakotoranga Hangarau

NTJD4001NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Contact Plating Tin
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 272mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 17 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 100μA
Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 5V
Fall Time (Typ) 23 ns
Continuous Drain Current (ID) 250mA
Gate to Source Voltage (Vgs) 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Nominal Vgs 1.2 V
Length 2.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Resistance 1Ohm
Voltage - Rated DC 30V
Terminal Form GULL WING
Current Rating 250mA
Pin Count 6
Element Configuration Dual
Power Dissipation 272mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 1.5 Ω @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds 33pF @ 5V
Rise Time 23ns
Turn-Off Delay Time 94 ns
Threshold Voltage 1.2V
Drain to Source Breakdown Voltage 30V
FET Feature Standard
Height 1mm
Width 1.35mm
REACH SVHC No SVHC
Lead Free Lead Free
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