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NTLGD3502NT2G Whakatakotoranga Hangarau

MOSFET 2N-CH 20V 4.3A/3.6A 6DFN

Huanga Hua Uara Huanga
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 1.74W
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Element Configuration Dual
Power Dissipation 1.74W
Turn On Delay Time 7 ns
Rds On (Max) @ Id, Vgs 60m Ω @ 4.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Fall Time (Typ) 17.5 ns
Continuous Drain Current (ID) 5.8A
Drain Current-Max (Abs) (ID) 4.3A
Pulsed Drain Current-Max (IDM) 17.2A
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LIFETIME (Last Updated: 1 day ago)
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 60MOhm
HTS Code 8541.29.00.95
Peak Reflow Temperature (Cel) 260
Base Part Number NTLGD3502N
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.3A 3.6A
Rise Time 17.5ns
Turn-Off Delay Time 8.6 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Radiation Hardening No
Lead Free Lead Free
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