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NTLGF3402PT2G Whakatakotoranga Hangarau

MOSFET P-CH 20V 2.3A 6-DFN

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series FETKY™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-XDSO-C8
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.2 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 22 ns
Continuous Drain Current (ID) 3.9A
Drain Current-Max (Abs) (ID) 2.3A
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LIFETIME (Last Updated: 2 weeks ago)
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2006
JESD-609 Code e3
Part Status Active
Number of Terminations 8
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form C BEND
Current Rating -3.9A
Pin Count 6
Number of Elements 1
Power Dissipation-Max 1.14W Ta
Power Dissipation 1.6W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 140m Ω @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±12V
Turn-Off Delay Time 25 ns
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.14Ohm
Pulsed Drain Current-Max (IDM) 11A
RoHS Status ROHS3 Compliant
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