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NTMFS4833NT1G Whakatakotoranga Hangarau

NTMFS4833NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Package / Case 8-PowerTDFN, 5 Leads
Number of Pins 5
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Element Configuration Single
Power Dissipation 2.35W
Turn On Delay Time 25 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 16A Ta 156A Tc
Rise Time 34ns
Vgs (Max) ±20V
Turn-Off Delay Time 50 ns
Threshold Voltage 1.5V
Drain to Source Breakdown Voltage 30V
Height 1mm
Width 5.8mm
REACH SVHC No SVHC
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Resistance 2MOhm
Subcategory FET General Purpose Power
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Pin Count 6
Power Dissipation-Max 910mW Ta 125W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 88nC @ 11.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 191A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 288A
Length 4.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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