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NTMFS4983NFT1G Whakatakotoranga Hangarau

NTMFS4983NFT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Contact Plating Tin
Package / Case 8-PowerTDFN
Number of Pins 5
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Number of Elements 1
Power Dissipation-Max 1.7W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.3V @ 1mA
Current - Continuous Drain (Id) @ 25°C 22A Ta 106A Tc
Rise Time 24.9ns
Vgs (Max) ±20V
Turn-Off Delay Time 28.7 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 5
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.1m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 47.9nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 10.7 ns
Continuous Drain Current (ID) 106A
Drain Current-Max (Abs) (ID) 22A
Pulsed Drain Current-Max (IDM) 320A
RoHS Status ROHS3 Compliant
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