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NTMS4107NR2G Whakatakotoranga Hangarau

MOSFET N-CH 30V 11A 8-SOIC

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 38 ns
Continuous Drain Current (ID) 18A
Drain Current-Max (Abs) (ID) 11A
Drain to Source Breakdown Voltage 30V
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin (Sn)
Voltage - Rated DC 30V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Pin Count 8
Number of Elements 1
Power Dissipation-Max 930mW Ta
Power Dissipation 16.7W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 11A Ta
Rise Time 10ns
Vgs (Max) ±20V
Turn-Off Delay Time 94 ns
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.0045Ohm
RoHS Status RoHS Compliant
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