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NTR4170NT1G Whakatakotoranga Hangarau

MOSFET N-CH 30V 3.2A SOT23

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 3
Number of Channels 1
Element Configuration Single
Power Dissipation 480mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 55m Ω @ 3.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 432pF @ 15V
Rise Time 9.9ns
Vgs (Max) ±12V
Turn-Off Delay Time 15.1 ns
Threshold Voltage 1V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1 V
Length 3.04mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 55MOhm
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 480mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 4.76nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Fall Time (Typ) 3.5 ns
Continuous Drain Current (ID) 2.4A
Gate to Source Voltage (Vgs) 12V
Max Junction Temperature (Tj) 150°C
Height 1.11mm
Width 1.4mm
REACH SVHC No SVHC
Lead Free Lead Free
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