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NTTD1P02R2 Whakatakotoranga Hangarau

MOSFET 2P-CH 20V 1.45A 8MICRO

Huanga Hua Uara Huanga
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Terminal Form GULL WING
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power Dissipation 500mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 30 ns
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Feature Logic Level Gate
Lead Free Contains Lead
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2006
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) 240
Current Rating -1.45A
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 160m Ω @ 1.45A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 265pF @ 16V
Rise Time 30ns
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 1.45A
Drain-source On Resistance-Max 0.16Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status Non-RoHS Compliant
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Wāhanga # Kaihanga Kāwai Te waatea
NTTD1P02R2 AMI Semiconductor / ON Semiconductor Transistors - FETs, MOSFETs - Arrays 2785
NTTD1P02R2G AMI Semiconductor / ON Semiconductor Transistors - FETs, MOSFETs - Arrays 2562
NTTD1P02R2G ON Semiconductor MOSFETs Transistors Arrays

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