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NTTFS4C13NTWG Whakatakotoranga Hangarau

Trans MOSFET N-CH 30V 11.7A 8-Pin WDFN T/R

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code S-PDSO-F5
Power Dissipation-Max 780mW Ta 21.5W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.4m Ω @ 30A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 7.2A Ta
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Package / Case 8-PowerWDFN
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2014
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 8
Number of Elements 1
Element Configuration Single
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 7.2A
Drain-source On Resistance-Max 0.0094Ohm
Radiation Hardening No
Lead Free Lead Free
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