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NTZD3152PT1H Whakatakotoranga Hangarau

Trans MOSFET P-CH 20V 0.43A T/R

Huanga Hua Uara Huanga
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 15 Weeks
Package / Case SOT-563, SOT-666
Number of Pins 6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 6
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 35 ns
Gate to Source Voltage (Vgs) 6V
Drain-source On Resistance-Max 0.9Ohm
FET Feature Standard
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Weight 8.193012mg
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ESD PROTECTION, LOW THRESHOLD
Max Power Dissipation 250mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 6
Element Configuration Dual
Power Dissipation 280mW
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 900m Ω @ 430mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 16V
Rise Time 12ns
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 430mA
Drain Current-Max (Abs) (ID) 0.43A
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
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