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NVMFD5C672NLWFT1G Whakatakotoranga Hangarau

MOSFET 2N-CH 60V 49A S08FL

Huanga Hua Uara Huanga
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 48 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection DRAIN
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 2.2V @ 30μA
Current - Continuous Drain (Id) @ 25°C 12A Ta 49A Tc
Drain to Source Voltage (Vdss) 60V
Pulsed Drain Current-Max (IDM) 146A
Avalanche Energy Rating (Eas) 66 mJ
FET Feature Standard
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power - Max 3.1W Ta 45W Tc
Rds On (Max) @ Id, Vgs 11.9m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 793pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 4.5V
Drain-source On Resistance-Max 0.0168Ohm
DS Breakdown Voltage-Min 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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