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NVMFS4841NT1G Whakatakotoranga Hangarau

MOSFET Single N-Channel 30V,89A,7mOhm

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Last Time Buy
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Number of Elements 1
Element Configuration Single
Power Dissipation 112W
Turn On Delay Time 13.5 ns
Rds On (Max) @ Id, Vgs 7m Ω @ 30A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 16A Ta
Rise Time 66.5ns
Vgs (Max) ±20V
Turn-Off Delay Time 15.5 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LIFETIME (Last Updated: 4 days ago)
Mounting Type Surface Mount
Number of Pins 5
Operating Temperature -55°C~175°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 5
Power Dissipation-Max 3.7W Ta 112W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1436pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 7.5 ns
Continuous Drain Current (ID) 16A
Drain Current-Max (Abs) (ID) 89A
Pulsed Drain Current-Max (IDM) 336A
RoHS Status ROHS3 Compliant
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