PN4250A Whakatakotoranga Hangarau

PN4250A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Published 1997
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Max Power Dissipation 625mW
Number of Elements 1
Element Configuration Single
Power - Max 625mW
Collector Emitter Voltage (VCEO) 60V
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100μA 5V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 60V
Collector Emitter Saturation Voltage 250mV
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Weight 201mg
Packaging Bulk
Part Status Obsolete
Max Operating Temperature 150°C
Voltage - Rated DC -60V
Current Rating -500mA
Polarity PNP
Power Dissipation 625mW
Transistor Type PNP
Max Collector Current 500mA
Current - Collector Cutoff (Max) 10nA ICBO
Collector Emitter Breakdown Voltage 60V
Current - Collector (Ic) (Max) 500mA
Collector Base Voltage (VCBO) 60V
hFE Min 250
Lead Free Lead Free
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PN4250A Tuhinga

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Ko etahi atu ko   "PN425"   nga wahanga

Ko nga waahanga e whai ake nei ko  'PN425' 

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