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SMMBT5551LT1G Whakatakotoranga Hangarau

SMMBT5551LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2001
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Base Part Number MMBT5551
Number of Elements 1
Power Dissipation 300mW
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 160V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector (Ic) (Max) 600mA
Max Breakdown Voltage 160V
Emitter Base Voltage (VEBO) 6V
VCEsat-Max 0.2 V
Length 3.04mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Max Power Dissipation 225mW
Terminal Form GULL WING
Pin Count 3
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN
Max Collector Current 60mA
Current - Collector Cutoff (Max) 100nA
Collector Emitter Breakdown Voltage 160V
Collector Emitter Saturation Voltage 200mV
Collector Base Voltage (VCBO) 180V
hFE Min 80
Height 1.11mm
Width 2.64mm
REACH SVHC No SVHC
Lead Free Lead Free
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