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SMMBTA06LT3G Whakatakotoranga Hangarau

SMMBTA06LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 300mW
Terminal Form GULL WING
Base Part Number MMBTA06
Number of Elements 1
Power Dissipation 300mW
Transistor Application AMPLIFIER
Transistor Type NPN
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 250mV
Collector Base Voltage (VCBO) 80V
Height 1.11mm
Width 2.64mm
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position DUAL
Frequency 100MHz
Pin Count 3
Element Configuration Single
Power - Max 225mW
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 80V
Emitter Base Voltage (VEBO) 4V
Length 3.04mm
Radiation Hardening No
Lead Free Lead Free
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