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DTC043EEBTL Whakatakotoranga Hangarau

TRANS PREBIAS NPN 50V EMT3F

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Published 2013
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 150mW
Terminal Form FLAT
Output Voltage 50mV
Polarity NPN
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 150mV
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5mA 10V
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 4.7 k Ω
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SC-89, SOT-490
Packaging Tape & Reel (TR)
Part Status Active
Number of Terminations 3
Max Operating Temperature 150°C
Subcategory BIP General Purpose Small Signal
Terminal Position DUAL
JESD-30 Code R-PDSO-F3
Number of Elements 1
Element Configuration Single
Transistor Type NPN - Pre-Biased
Max Collector Current 100mA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 5mA
Max Frequency 250MHz
Max Breakdown Voltage 50V
Continuous Collector Current 100mA
RoHS Status ROHS3 Compliant
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