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IMD16AT108 Whakatakotoranga Hangarau

TRANS NPN/PNP PREBIAS 0.3W SMT6

Huanga Hua Uara Huanga
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 6
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC 50V
Terminal Form GULL WING
Current Rating 500mA
Base Part Number MD16A
Max Output Current 100mA
Number of Elements 2
Number of Channels 2
Power Dissipation 300mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Max Collector Current 500mA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA / 300mV @ 100μA, 1mA
Current - Collector (Ic) (Max) 100mA 500mA
Collector Emitter Saturation Voltage 300mV
Frequency - Transition 250MHz
hFE Min 100
Continuous Collector Current 100mA
Height 1.1mm
Width 1.6mm
REACH SVHC No SVHC
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SC-74, SOT-457
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Active
Number of Terminations 6
Terminal Finish TIN SILVER COPPER
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 300mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 6
Operating Supply Voltage 50V
Polarity NPN, PNP
Element Configuration Dual
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V / 82 @ 50mA 5V
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 5V
Resistor - Base (R1) 100k Ω, 2.2k Ω
Resistor - Emitter Base (R2) 22k Ω
Length 2.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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