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US6M2TR Whakatakotoranga Hangarau

MOSFET N/P-CH 30V/20V TUMT6

Huanga Hua Uara Huanga
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature 150°C TJ
Published 2001
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 340MOhm
Subcategory Other Transistors
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 6
Element Configuration Dual
Power Dissipation 1W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 1.5A 1A
Drain to Source Voltage (Vdss) 30V 20V
Turn-Off Delay Time 25 ns
Threshold Voltage 1.5V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Nominal Vgs 1.5 V
REACH SVHC No SVHC
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 6-SMD, Flat Leads
Transistor Element Material SILICON
Packaging Cut Tape (CT)
JESD-609 Code e2
Part Status Active
Number of Terminations 6
ECCN Code EAR99
Terminal Finish TIN COPPER
Max Power Dissipation 1W
Current Rating 1.5A
Base Part Number *M2
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 240m Ω @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 12V
Dual Supply Voltage 30V
FET Feature Standard
Radiation Hardening No
RoHS Status ROHS3 Compliant
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