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IPP060N06NAKSA1 Whakatakotoranga Hangarau

MOSFET N-CH 60V 17A TO220-3

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 3W Ta 83W Tc
Power Dissipation 83W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.8V @ 36μA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 45A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.006Ohm
Avalanche Energy Rating (Eas) 60 mJ
Lead Free Contains Lead
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6m Ω @ 45A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 17A Ta 45A Tc
Rise Time 12ns
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
RoHS Status ROHS3 Compliant
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