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IPP062NE7N3GXKSA1 Whakatakotoranga Hangarau

MOSFET N-CH 75V 80A TO220-3

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 136W Tc
Power Dissipation 136W
FET Type N-Channel
Vgs(th) (Max) @ Id 3.8V @ 70μA
Input Capacitance (Ciss) (Max) @ Vds 3840pF @ 37.5V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0062Ohm
Radiation Hardening No
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~175°C TJ
Published 2011
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
Rds On (Max) @ Id, Vgs 6.2m Ω @ 73A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 80A Tc
Rise Time 48ns
Vgs (Max) ±20V
Turn-Off Delay Time 24 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 75V
Pulsed Drain Current-Max (IDM) 320A
RoHS Status ROHS3 Compliant
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