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NTJD4158CT2G Whakatakotoranga Hangarau

MOSFET N/P-CH 30V/20V SC88-6

Huanga Hua Uara Huanga
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 6
Terminal Finish Tin (Sn)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 1.5 Ω @ 10mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 33pF @ 5V
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 5V
Drain to Source Voltage (Vdss) 30V 20V
Fall Time (Typ) 6.5 ns
Continuous Drain Current (ID) 880mA
Drain Current-Max (Abs) (ID) 0.25A
Drain to Source Breakdown Voltage -20V
FET Feature Logic Level Gate
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 270mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Base Part Number NTJD4158C
Qualification Status Not Qualified
Element Configuration Dual
Power Dissipation 270mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 250mA 880mA
Rise Time 6.5ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 13.5 ns
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 2.5Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 12 pF
Lead Free Lead Free
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