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NTZD3155CT2G Whakatakotoranga Hangarau

NTZD3155CT2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Contact Plating Tin
Package / Case SOT-563, SOT-666
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 20V
Terminal Form FLAT
Current Rating 540mA
Base Part Number NTZD3155C
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 550m Ω @ 540mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 35 ns
Gate to Source Voltage (Vgs) 6V
Drain-source On Resistance-Max 0.55Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Nominal Vgs 1 V
REACH SVHC No SVHC
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Subcategory Other Transistors
Max Power Dissipation 250mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Element Configuration Dual
Power Dissipation 250mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 540mA 430mA
Rise Time 12ns
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 540mA
Drain Current-Max (Abs) (ID) 0.54A
Drain to Source Breakdown Voltage 20V
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
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